1 au g - 27 - 20 01 bsm 100 gd 120 dn2 igbt power module ? solderable power module ? 3-phase full-bridge ? including fast free-wheel diodes ? package with insulated metal base plate type v ce i c package ordering code bsm 100 gd 120 dn2 1200 v 150 a econopack 3 c67070-a2517-a67 maximum ratings parameter symbol values unit collector-emitter voltage v ce 1200 v collector-gate voltage r ge = 20 k w v cgr 1200 gate-emitter voltage v ge 20 dc collector current t c = 25 c t c = 80 c i c 100 150 a pulsed collector current, t p = 1 ms t c = 25 c t c = 80 c i cpuls 200 300 power dissipation per igbt t c = 25 c p to t 680 w chip temperature t j + 150 c storage temperature t stg -40 ... + 125 thermal resistance, chip case r thjc 0.182 k/w diode thermal resistance, chip case r thjc d 0.36 insulation test voltage, t = 1min. v is 2500 vac creepage distance - 16 mm clearance - 11 din humidity category, din 40 040 - f sec iec climatic category, din iec 68-1 - 40 / 125 / 56
2 au g - 27 - 20 01 bsm 100 gd 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v ge = v ce, i c = 4 ma v ge(th) 4.5 5.5 6.5 v collector-emitter saturation voltage v ge = 15 v, i c = 100 a, t j = 25 c v ge = 15 v, i c = 100 a, t j = 125 c v ce(sat) - - 3.1 2.5 3.7 3 zero gate voltage collector current v ce = 1200 v, v ge = 0 v, t j = 25 c v ce = 1200 v, v ge = 0 v, t j = 125 c i ces - - 6 1.5 - 2 ma gate-emitter leakage current v ge = 20 v, v ce = 0 v i ges - - 400 na ac characteristics transconductance v ce = 20 v, i c = 100 a g fs 54 - - s input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c iss - 6.5 - nf output capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c oss - 1 - reverse transfer capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c rss - 0.5 -
3 a ug - 27 - 20 01 bsm 100 gd 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. switching characteristics, inductive load at t j = 125 c turn-on delay time v cc = 600 v, v ge = 15 v, i c = 100 a r gon = 6.8 w t d(on) - 160 320 ns rise time v cc = 600 v, v ge = 15 v, i c = 100 a r gon = 6.8 w t r - 80 160 turn-off delay time v cc = 600 v, v ge = -15 v, i c = 100 a r goff = 6.8 w t d(off) - 400 520 fall time v cc = 600 v, v ge = -15 v, i c = 100 a r goff = 6.8 w t f - 70 100 free-wheel diode diode forward voltage i f = 100 a, v ge = 0 v, t j = 25 c i f = 100 a, v ge = 0 v, t j = 125 c v f - - 1.8 2.3 - 2.8 v reverse recovery time i f = 100 a, v r = -600 v, v ge = 0 v d i f / dt = -800 a/s, t j = 125 c t rr - 0.3 - s reverse recovery charge i f = 100 a, v r = -600 v, v ge = 0 v d i f / dt = -800 a/s t j = 25 c t j = 125 c q rr - - 11 4 - - c
4 a u g - 27 - 20 01 bsm 100 gd 120 dn2 power dissipation p tot = | ( t c ) parameter: t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 50 100 150 200 250 300 350 400 450 500 550 600 w 700 p tot safe operating area i c = | ( v ce ) parameter: d = 0 , t c = 25 c , t j 150 c -1 10 0 10 1 10 2 10 3 10 a i c 10 0 10 1 10 2 10 3 v v ce dc 10 ms 1 ms 100 s t p = 15.0 s collector current i c = | ( t c ) parameter: v ge 3 15 v , t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 130 a 150 i c transient thermal impedance igbt z th jc = | ( t p ) parameter: d = t p / t -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
5 a u g - 27 - 20 01 bsm 100 gd 120 dn2 typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 25 c 0 1 2 3 v 5 v ce 0 20 40 60 80 100 120 140 160 a 200 i c 17v 15v 13v 11v 9v 7v typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 125 c 0 1 2 3 v 5 v ce 0 20 40 60 80 100 120 140 160 a 200 i c 17v 15v 13v 11v 9v 7v typ. transfer characteristics i c = f (v ge ) parameter: t p = 80 s, v ce = 20 v 0 2 4 6 8 10 v 14 v ge 0 20 40 60 80 100 120 140 160 a 200 i c
6 a ug - 27 - 20 01 bsm 100 gd 120 dn2 typ. gate charge v ge = | ( q gate ) parameter: i c puls = 100 a 0 100 200 300 400 500 nc 700 q gate 0 2 4 6 8 10 12 14 16 v 20 v ge 800 v 600 v typ. capacitances c = f ( v ce ) parameter: v ge = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ce -1 10 0 10 1 10 2 10 nf c ciss coss crss reverse biased safe operating area i cpuls = f(v ce ) , t j = 150c parameter: v ge = 15 v 0 200 400 600 800 1000 1200 v 1600 v ce 0.0 0.5 1.0 1.5 2.5 i cpuls / i c short circuit safe operating area i csc = f(v ce ) , t j = 150c parameter: v ge = 15 v, t sc 10 s, l < 50 nh 0 200 400 600 800 1000 1200 v 1600 v ce 0 2 4 6 8 12 i csc / i c
7 au g - 27 - 2 00 1 bsm 100 gd 120 dn2 typ. switching time i = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 6.8 w 0 50 100 150 a 250 i c 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching time t = f (r g ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, i c = 100 a 0 10 20 30 40 w 60 r g 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf typ. switching losses e = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 6.8 w 0 50 100 150 a 250 i c 0 10 20 30 40 mws 60 e eon eoff typ. switching losses e = f (r g ) , inductive load , t j = 125c par.: v ce = 600v, v ge = 15 v, i c = 100 a 0 10 20 30 40 w 60 r g 0 10 20 30 40 mws 60 e eon eoff
8 au g - 27 - 2 00 1 bsm 100 gd 120 dn2 forward characteristics of fast recovery reverse diode i f = f(v f ) parameter: t j 0.0 0.5 1.0 1.5 2.0 v 3.0 v f 0 20 40 60 80 100 120 140 160 a 200 i f t j =25c =125c j t transient thermal impedance diode z th jc = | ( t p ) parameter: d = t p / t -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
9 au g - 27 - 20 0 1 bsm 100 gd 120 dn2 mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. not connected: 16,18 econo3
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